Leading Research Report of GaN Power Devices Market: Emerging Trends, Technology, Applications, Highlights and Challenges Forecast 2024

GaN Power Devices

Report TitledGaN Power Devices Market Exploration Report Forecast 2019-2024 includes a comprehensive study of the important sections to provide insights on the GaN Power Devices Market dynamics until 2024, which would enable the stakeholders to capitalize on prevailing market opportunities, newest industry data and GaN Power Devices Industry future trends, allowing you to identify the products and end users driving Revenue growth and effectiveness.

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About GaN Power Devices:

GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.

Players mentioned in the GaN Power Devices Market Report are:

Fujitsu,Toshiba,Koninklijke Philips,Texas Instruments,EPIGAN,NTT Advanced Technology,RF Micro Devices,Cree Incorporated,Aixtron,International Quantum Epitaxy (IQE),Mitsubishi Chemical,AZZURO Semiconductors

With a purpose of enlightening new entrants about the possibilities in this GaN Power Devices Market, this report provides a competitive scenario of the market with growth trends, structure, driving factors, scope, opportunities, challenges, vendor landscape analysis and so on, is discussed in the report.

GaN Power Devices Market Types:

  • 600V
  • Other

    GaN Power Devices Market Applications:

  • Server and Other IT Equipments
  • High-efficiency and Stable Power Supplies
  • Rapidly Expanding HEV/EV Devices

     GaN Power Devices Market: Regional Segment Analysis: –

    • USA
    • Europe
    • SEA
    • China

    Browse TOC and Charts & Tables of GaN Power Devices Market Research Report available at- https://www.absolutereports.com/global-gan-power-devices-market-2019-by-manufacturers-regions-type-and-application-forecast-to-2024-14027267            

    Scope of Report:

  • The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.
  • The market for GaN-based power drives is expected to grow significantly during the forecast period. This is attributed to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. The growing EV charging and electric vehicle production markets, as well as increasing renewable energy generation are the main reasons for the high growth rate of GaN-based power devices. Moreover, there is a huge demand for motor drives due to the high efficiency and performance characteristics offered by GaN devices in high voltage range (above 400 V) applications. GaN power devices are mainly used in UPS and motor control, wireless charging, high-efficiency power supply applications, servo motor drive, and hybrid and EV battery control and health management systems.
  • The worldwide market for GaN Power Devices is expected to grow at a CAGR of roughly xx% over the next five years, will reach xx million US$ in 2024, from xx million US$ in 2019, according to a new study.
  • This report focuses on the GaN Power Devices in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.

    TOC of this GaN Power Devices Market report:

    Chapter 1: Describes About the GaN Power Devices Industry, Types and Applications

    Chapter 2 Executive Summary: Global GaN Power Devices Revenue, Sales, Growth Rate by Regions, Sales by Regions, Revenue by Regions

    Chapter 3: Breakdown Data by Manufacturers: GaN Power Devices Sales by Manufacturers, GaN Power Devices Revenue by Manufacturers, GaN Power Devices Price by Manufacturers, GaN Power Devices Manufacturing Base Distribution, Product Types and Manufacturers Mergers & Acquisitions, Expansion Plans

    Chapter 4: Breakdown Data by Product: GaN Power Devices Sales by Product, Revenue by Product and Price by Product

    Chapter 5: Breakdown Data by End User: Overview

    Chapter 6: Market size by Region: North America, Europe, Asia Pacific, Central & South America, Middle East and Africa,

    Chapter 7: Company Profiles: Company Details, Business Overview, Sales, Revenue and Gross Margin (2014-2019), Products Offered and Recent Development

    Chapter 8: Future Forecast: Market Forecast by Regions, Sales Forecast by Regions 2019-2024, Forecast by Product 2019-2024, Market Forecast by End User, North America GaN Power Devices Forecast, Europe GaN Power Devices Forecast, Asia Pacific GaN Power Devices Forecast, Central & South America GaN Power Devices Forecast and Middle East and Africa GaN Power Devices Forecast

    Chapter 9: Market Opportunities, Challenges, Risks and Influences Factors Analysis

    Chapter 10: Value Chain and Sales Channels Analysis: Value Chain Analysis, GaN Power Devices Customers and Sales Channels Analysis

    Chapter 11: Research Findings and Conclusion

    No. of Pages: 117

    Price of Report: $ 3480 (SUL)

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